HVD359 查看數據表（PDF） - TY Semiconductor

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HVD359

Variable Capacitance Diode for VCXO

TY Semiconductor 

Product specification

HVD359

Features

High capacitance ratio and good C-V linearity.

To be usable at low voltage.

Super small Flat Lead Package (SFP) is suitable for surface mount design.

SOD-123

2.7+0.1

-0.1

Unit: mm

1.1+0.05

-0.05

3.7+0.1

-0.1

0.50

0.35

0.1max

Absolute M axim um R atings T a = 25

Param eter

Reverse Voltage

Junction tem perature

Storage tem perature

Sym bol

VR

Tj

T stg

V a lu e

15

125

-55 to +125

U n it

V

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Min

Max

Unit

IR1

Reverse current

IR2

VR = 10 V

VR = 10 V,Ta = 60

10

nA

100

C1

Capacitance

C4

Capacitance ratio

n

VR = 1 V, f = 1 MHz

VR = 4 V, f = 1 MHz

C1 / C4

24.8

29.8

pF

6

8.3

3

Series resistance

ESD-Capability *1

rs

VR = 4 V, f = 100 MHz

1.5

C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.

80

V

Note:

1. Failure criterion ; IR 20 nA at VR =10 V

Marking

Marking

G

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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