M5M5V4R04J-12 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M5M5V4R04J-12 Datasheet PDF : 6 Pages
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(2)READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S)
ta(OE)
tdis(S)
tdis (OE)
ten(S)
ten (OE)
tv(A)
tPU
tPD
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time after S high
Output disable time after OE high
Output enable time after S low
Output enable time after OE low
Data valid time after address change
Power-up time after chip selection
Power-down time after chip selection
MITSUBISHI LSIs
M5M5V4R04J-12,-15
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
Limits
M5M5V4R04J -12 M5M5V4R04J -15 Unit
Min
Max
Min
Max
12
15
ns
12
15
ns
12
15
ns
6
8
ns
0
6
0
7
ns
0
6
0
7
ns
0
0
ns
0
0
ns
3
3
ns
0
12
0
ns
15
ns
(3)WRITE CYCLE
Symbol
Parameter
tCW
tw(W)
Write cycle time
Write pulse width
tsu(A)1 Address setup time(W)
tsu(A)2 Address setup time(S)
tsu (S)
Chip select setup time
tsu (D)
Data setup time
th(D)
Data hold time
trec(W) Write recovery time
tdis (W) Output disable time after W low
tdis (OE) Output disable time after OE high
ten (W) Output enable time after W high
ten (OE) Output enable time after OE low
tsu(A-WH) Address to W High
Limits
M5M5V4R04J -12 M5M5V4R04J -15
Unit
Min
Max
Min
Max
12
15
ns
10
12
ns
0
0
ns
0
0
ns
10
12
ns
6
7
ns
0
0
ns
1
1
ns
0
6
0
7
ns
0
6
0
7
ns
0
0
ns
0
0
ns
10
12
ns
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ELECTRIC
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