HX6256NSRT 查看數據表（PDF） - Honeywell International

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HX6256NSRT

32K x 8 Static RAM

Honeywell International 

HX6256

32K x 8 Static RAM

The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768

word x 8-bit static random access memory with industry-standard

functionality. It is fabricated with Honeywell’s radiation hardened

technology, and is designed for use in systems operating in radiation

environments. The RAM operates over the full military temperature range

and requires only a single 5 V ± 10% power supply. The RAM is available

with either TTL or CMOS compatible I/O. Power consumption is typically

less than 15 mW/MHz in operation, and less than 5 mW when de-selected.

The RAM read operation is fully asynchronous, with an associated typical

access time of 17 ns at 5 V.

Honeywell’s enhanced SOI RICMOS™ IV (Radiation Insensitive CMOS)

technology is radiation hardened through the use of advanced and

proprietary design, layout, and process hardening techniques. The

RICMOS™ IV process is a 5-volt, SOI CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of

0.75 µm (0.6 µm effective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary

SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7

transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and

the low collection volume SOI substrate provide improved dose rate hardening.

FEATURES

RADIATION

• Fabricated with RICMOS™ IV Silicon on Insulator

(SOI) 0.7 µm Process (Leff = 0.6 µm)

• Total Dose Hardness through 1x106 rad(SiO2)

• Neutron Hardness through 1x1014 cm-2

• Dynamic and Static Transient Upset Hardness

through 1x109 rad(Si)/s

• Dose Rate Survivability through 1x1011 rad(Si)/s

• Soft Error Rate of <1x10-10 upsets/bit-day in

Geosynchronous Orbit

• No Latchup

OTHER

• Listed On SMD#5962–95845

• Fast Cycle Times

o ≤ 17 ns (Typical)

o ≤ 25 ns (-55 to 125°C) Read Write Cycle

• Asynchronous Operation

o CMOS or TTL Compatible I/O

• Single 5 V ± 10% Power Supply

• Packaging Options

o 28-Lead CFP (0.500 in. x 0.720 in.)

o 28-Lead DIP, MIL-STD-1835, CDIP2-T28

o 36-Lead CFP—Bottom Braze (0.630 x 0.650 in.)

o 36-Lead CFP—Top Braze (0.630 x 0.650 in.)

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