HY27UF081G2M-T 查看數據表（PDF） - Hynix Semiconductor

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HY27UF081G2M-T

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Hynix Semiconductor 

Preliminary

HY27UF(08/16)1G2M Series

HY27SF(08/16)1G2M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

CLE

ALE

CE#

WE#

RE#

WP#

MODE

H

L

L

Rising

H

X

Command Input

Read Mode

L

H

L

Rising

H

X

Address Input(4 cycles)

H

L

L

Rising

H

H

Command Input

Write Mode

L

H

L

Rising

H

H

Address Input(4 cycles)

L

L

L

Rising

H

H

Data Input

L

L

L(1)

H

Falling

X

Sequential Read and Data Output

L

L

L

H

H

X

During Read (Busy)

X

X

X

X

X

H

During Program (Busy)

X

X

X

X

X

H

During Erase (Busy)

X

X

X

X

X

L

Write Protect

X

X

H

X

X

0V/Vcc Stand By

Table 6: Mode Selection

NOTE:

1. With the CE# don’t care option CE# high during latency time does not stop the read operation

Rev 0.7 / Apr. 2005

10

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