HYB39S16160CT 查看數據表（PDF） - Siemens AG

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HYB39S16160CT

16 MBit Synchronous DRAM

Siemens AG 

HYB 39S16400/800/160CT-8/-10

16 MBit Synchronous DRAM

Ordering Information

Type

Ordering Code

LVTTL-Version

HYB 39S16400CT-8 on request

HYB 39S16400CT-10 on request

HYB 39S16800CT-8 on request

HYB 39S16800CT-10 on request

HYB 39S16160CT-8 on request

HYB 39S16160CT-10 on request

Package

P-TSOPII-44-1 400 mil

P-TSOPII-44-1 400 mil

P-TSOPII-44-1 400 mil

P-TSOPII-44-1 400 mil

P-TSOPII-50 400 mil

P-TSOPII-50 400 mil

Description

125 MHz 2B × 2 M

× 4 SDRAM, PC100 2-2-2

100 MHz 2B × 2 M

× 4 SDRAM, PC66 2-2-2

125 MHz 2B × 1 M

× 8 SDRAM, PC100 2-2-2

100 MHz 2B × 1 M

× 8 SDRAM, PC66 2-2-2

125 MHz 2B × 512k

× 16 SDRAM

100 MHz 2B × 512k

× 1 SDRAM

Pin Names

CLK

CKE

CS

RAS

CAS

WE

A0 - A10

A11 (BS)

Clock Input

Clock Enable

Chip Select

Row Address Strobe

Column Address Strobe

Write Enable

Address Inputs

Bank Select

DQ

Data Input /Output

DQM, LDQM, Data Mask

UDQM

VDD

VSS

VDDQ

VSSQ

NC

Power (+ 3.3 V)

Ground

Power for DQ’s (+ 3.3 V)

Ground for DQ’s

Not connected

Semiconductor Group

2

1998-10-01

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