Q67100-Q2100 查看數據表（PDF） - Siemens AG

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产品描述 (功能)

生产厂家

Q67100-Q2100

256k × 16-Bit EDO-DRAM

Siemens AG 

256k × 16-Bit EDO-DRAM

HYB 514175BJ-50/-55/-60

Advanced Information

• 262 144 words by 16-bit organization

• 0 to 70 °C operating temperature

• Fast access and cycle time

• RAS access time:

50 ns (-50 version)

55 ns (-55 version)

60 ns (-60 version)

• CAS access time:

13 ns (-50 & -55 version)

15 ns (-60 version)

• Cycle time:

89 ns (-50 version)

94 ns (-55 version)

104 ns (-60 version)

• Hyper page mode (EDO) cycle time

20 ns (-50 & -55 version)

25 ns (-60 version)

• High data rate

50 MHz (-50 & -55 version)

40 MHz (-60 version)

• Single + 5 V (± 10 %) supply with a built-in

VBB generator

• Low Power dissipation

max. 1100 mW active (-50 version)

max. 1045 mW active (-55 version)

max. 935 mW active (-60 version)

• Standby power dissipation

11 mW standby (TTL)

5.5 mW max. standby (CMOS)

• Output unlatched at cycle end allows

two-dimensional chip selection

• Read, write, read-modify write,

CAS-before-RAS refresh, RAS-only

refresh, hidden-refresh and hyper page

(EDO) mode capability

• 2 CAS/1 WE control

• All inputs and outputs TTL-compatible

• 512 refresh cycles/16 ms

• Plastic Packages:

P-SOJ-40-1 400 mil width

Semiconductor Group

1

1998-10-01

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