Q67100-Q2100 查看數據表（PDF） - Siemens AG
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Q67100-Q2100 Datasheet PDF : 22 Pages
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HYB 514175BJ/BJL-50/-55/-60
256k × 16 EDO-DRAM
DC Characteristics (cont’d)
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
min.
max.
Standby VCC supply current
ICC5
–
1
(RAS = LCAS = UCAS = WE = VCC – 0.2 V)
Average VCC supply current during
CAS-before-RAS refresh mode
ICC6
–
-50 version
200
-55 version
190
-60 version
170
Unit Test
Condition
mA 1
2, 4
mA
Capacitance
TA = 0 to 70 °C; VCC = 5 V ± 10 %, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A8)
CI1
–
5
pF
Input capacitance (RAS, UCAS, LCAS, WE, OE) CI2
–
7
pF
Output capacitance (l/O1 to l/O16)
CIO
–
7
pF
AC Characteristics 5, 6
TA = 0 to 70 °C; VSS = 0 V; VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-55
-60
min. max. min. max. min. max.
Common Parameters
Random read or write cycle time
tRC
RAS precharge time
tRP
RAS pulse width
tRAS
CAS pulse width
tCAS
Row address setup time
tASR
Row address hold time
tRAH
Column address setup time
tASC
Column address hold time
tCAH
RAS to CAS delay time
tRCD
RAS to column address delay time tRAD
89 – 94 – 104 – ns
35 – 35 – 40 – ns
50 10k 55 10k 60 10k ns
8 10k 8 10k 10 10k ns
0 – 0 – 0 – ns
8 – 8 – 10 – ns
0 – 0 – 0 – ns
8 – 8 – 10 – ns
12 37 12 43 14 45 ns
10 25 10 30 12 30 ns
Semiconductor Group
6
1998-10-01
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