HYB514405BJ-50 查看數據表（PDF） - Siemens AG
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HYB514405BJ-50 Datasheet PDF : 25 Pages
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HYB 514405BJ/BJL-50/-60/-70
1M x 4 EDO - DRAM
AC Characteristics (cont’d) 5)6)
TA = 0 to 70 ˚C, VCC = 5 V ± 10 %, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
-70
min. max. min. max. min. max.
CAS before RAS Refresh Cycle
CAS setup time
tCSR
10 –
10 –
10 –
ns
CAS hold time
tCHR
10 –
10 –
10 –
ns
RAS to CAS precharge time
tRPC
5
–
5
–
5
–
ns
Write to RAS precharge time
tWRP
10 –
10 –
10 –
ns
Write hold time referenced to
tWRH
10 –
10 –
10 –
ns
RAS
CAS-before-RAS Counter Test
Cycle
CAS precharge time (CAS-
tCPT
35 –
40 –
40 –
ns
before-RAS counter test cycle)
Test Mode
Write command setup time
Write command hold time
tWTS
10 –
10 –
10 –
ns
tWTH
10 –
10 –
10 –
ns
Capacitance
TA = 0 to 70 ˚C; VCC = 5 V ± 10 %; f = 1 MHz
Parameter
Input capacitance (A0 to A9)
Input capacitance (RAS, CAS, WE,OE)
Output capacitance (IO1 to IO4)
Symbol
Ci1
Ci2
Cio
Limit Values
min.
max.
–
5
–
7
–
7
Unit
pF
pF
pF
Semiconductor Group
9
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