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IDT74FCT540CT(2006) 查看數據表(PDF) - Integrated Device Technology

零件编号
产品描述 (功能)
生产厂家
IDT74FCT540CT
(Rev.:2006)
IDT
Integrated Device Technology IDT
IDT74FCT540CT Datasheet PDF : 6 Pages
1 2 3 4 5 6
IDT74FCT540AT/CT
FAST CMOS OCTAL BUFFER/LINE DRIVER
PIN CONFIGURATION
OEA
1
D0
2
D1
3
D2
4
D3
5
D4
6
D5
7
D6
8
D7
9
GND
10
20
VCC
19
OEB
18
O0
17
O1
16
O2
15
O3
14
O4
13
O5
12
O6
11
O7
SOIC/ SSOP/ QSOP
TOP VIEW
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) Terminal Voltage with Respect to GND
–0.5 to +7
V
VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC+0.5 V
TSTG Storage Temperature
–65 to +150
°C
IOUT DC Output Current
–60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
6
10 pF
COUT
Output Capacitance VOUT = 0V
8
12 pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
OEA, OEB
Dx
Ox
Description
3-State Output Enable Inputs (Active LOW)
Inputs
Outputs
FUNCTION TABLE(1)
Inputs
OEA
OEB
D
L
L
L
L
L
H
H
H
X
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High Impedance
Outputs
H
L
Z
2

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