IDT7005S17JB 查看數據表（PDF） - Integrated Device Technology

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IDT7005S17JB

HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT7005S/L

HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM

AC TEST CONDITIONS

Input Pulse Levels

Input Rise/Fall Times

Input Timing Reference Levels

Output Reference Levels

Output Load

GND to 3.0V

5ns Max.

1.5V

1.5V

Figure 1 and 2

2738 tbl 12

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATAOUT

BUSY

INT

775Ω

5V

1250Ω

30pF

DATAOUT

775Ω

5V

1250Ω

5pF

Figure 1. AC Output Test Load

2738 drw 06

Figure 2. Output Load

(For tLZ, tHZ, tWZ, tOW)

Including scope and jig

AC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(4)

Symbol

Parameter

IDT7005X15

Com'l. Only

Min. Max.

READ CYCLE

tRC

Read Cycle Time

15 —

tAA

Address Access Time

tACE

Chip Enable Access Time(3)

— 15

— 15

tAOE

Output Enable Access Time

— 10

tOH

Output Hold from Address Change

tLZ

Output Low-Z Time(1, 2)

tHZ

Output High-Z Time(1, 2)

tPU

Chip Enable to Power Up Time(2)

tPD

Chip Disable to Power Down Time(2)

3

3—

10

0

15

tSOP

Semaphore Flag Update Pulse (OE or SEM) 10

tSAA

Semaphore Address Access Time

15

IDT7005X17

Com'l. Only

Min. Max.

17

—

—

17

—

17

—

10

3

—

3

—

—

10

0

—

—

17

10

—

—

17

IDT7005X20

Min. Max.

20

—

—

20

—

20

—

12

3

—

3

—

—

12

0

—

—

20

10

—

—

20

IDT7005X25

Min. Max. Unit

25

— ns

—

25 ns

—

25 ns

—

13 ns

3

— ns

3

— ns

—

15 ns

0

— ns

—

25 ns

10

— ns

—

25 ns

IDT7005X35 IDT7005X55

Symbol

Parameter

READ CYCLE

tRC

Read Cycle Time

tAA

Address Access Time

tACE

Chip Enable Access Time(3)

tAOE

Output Enable Access Time

tOH

Output Hold from Address Change

tLZ

Output Low-Z Time(1, 2)

tHZ

Output High-Z Time(1, 2)

tPU

Chip Enable to Power Up Time(2)

tPD

Chip Disable to Power Down Time(2)

tSOP

Semaphore Flag Update Pulse (OE or SEM)

tSAA

Semaphore Address Access Time

Min. Max. Min.

35

—

55

—

35

—

—

35

—

—

20

—

3

—

3

3

—

3

—

15

—

0

—

0

—

35

—

15

—

15

—

35

—

NOTES:

1. Transition is measured ±500mV from Low or High-impedance voltage with Output Test Load (Figures 2).

2. This parameter is guaranteed by device characterization but not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.

4. "X" in part numbers indicates power rating (S or L).

Max.

—

55

55

30

—

—

25

—

50

—

55

IDT7005X70

Mil. Only

Min. Max. Unit

70

— ns

—

70 ns

—

70 ns

—

35 ns

3

— ns

3

— ns

—

30 ns

0

— ns

—

50 ns

15

— ns

—

70 ns

2738 tbl 13

6.06

7

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