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HGTG20N60C3D 查看數據表(PDF) - Fairchild Semiconductor

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HGTG20N60C3D Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HGTG20N60C3D
Typical Performance Curves Unless Otherwise Specified (Continued)
50
RG = 10, L = 1mH, VCE = 480V
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
30
25
TJ = 25oC, TJ = 150oC, VGE = 15V
20
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
RG = 10, L = 1mH, VCE = 480V
175
150
TJ = 25oC, TJ = 150oC, VGE = 10V
125
100
75
50
25
TJ = 25oC and TJ = 150oC, VGE = 15V
0
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 10, L = 1mH, VCE = 480V
275
250
225
TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120
RG = 10, L = 1mH, VCE = 480V
110
100
TJ = 150oC, VGE = 10V OR VGE = 15V
90
80
70
TJ = 25oC, VGE = 10V OR 15V
60
50
40
5
10
15
20
25
30
35
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
300
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
250
TC = -55oC
200
150
TC = 150oC
100
TC = 25oC
50
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
16 IG (REF) = 1mA, RL = 15, TC = 25oC
14
12
10
VCE = 600V
8
6
VCE = 200V
VCE = 400V
4
2
0
0 10 20 30 40 50 60 70 80 90 100
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG20N60C3D Rev. B

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