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IDT54FCT245 查看數據表(PDF) - Integrated Device Technology

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产品描述 (功能)
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IDT54FCT245
IDT
Integrated Device Technology IDT
IDT54FCT245 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IDT54/74FCT245/A/C, IDT54/74FCT640/A/C, IDT54/74FCT645/A/C
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Names
OE
T/R
Description
Output Enable Input (Active LOW)
Transmit/Receive Input
A0–A7
Side A Inputs or 3-State Outputs
B0–B7
Side B Inputs or 3-State Outputs
2534 tbl 05
FUNCTION TABLE(2)
Inputs
OE
T/R
L
L
L
H
Outputs
Bus B Data to Bus A(1)
Bus A Data to Bus B(1)
H
X
High Z State
NOTES:
1. 640 is inverting from input to output.
2. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
2534 tbl 06
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
VTERM(2) Terminal Voltage
with Respect
to GND
VTERM(3) Terminal Voltage
with Respect
to GND
Commercial Military Unit
–0.5 to +7.0 –0.5 to +7.0 V
–0.5 to VCC –0.5 to VCC V
TA
Operating
Temperature
0 to +70 –55 to +125 °C
TBIAS
Temperature
Under Bias
–55 to +125 –65 to +135 °C
TSTG
Storage
Temperature
–55 to +125 –65 to +150 °C
PT
Power Dissipation
0.5
0.5
W
IOUT
DC Output Current
120
120
mA
NOTES:
2534 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed VCC by +0.5V unless otherwise noted.
2. Inputs and VCC terminals.
3. Outputs and I/O terminals.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter(1) Conditions Typ. Max. Unit
CIN
Input Capacitance VIN = 0V
6 10 pF
CI/O
I/O Capacitance
VOUT = 0V 8 12 pF
NOTE:
2534 tbl 02
1. This parameter is measured at characterization but not tested.
7.9
2

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