IDT54FCT257TLQ 查看數據表（PDF） - Integrated Device Technology
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IDT54FCT257TLQ Datasheet PDF : 7 Pages
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IDT54/74FCT257T/AT/CT/DT
FAST CMOS QUAD 2-INPUT MULTIPLEXER
PIN CONFIGURATION
S
1
I0A
2
I1A
3
ZA
4
I0B
5
I1B
6
ZB
7
GND
8
16
VCC
15 OE
14
I0C
13
I1C
12
ZC
11
I0D
10
I1D
9
ZD
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
INDEX
32
20 19
I1A
4
1
18
I0C
ZA
5
17
I1C
NC
6
16 NC
I0B
7
15
ZC
I1B
8
14
I0D
9 10 11 12 13
CERDIP/ SOIC/ QSOP
TOP VIEW
LCC
TOP VIEW
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) Terminal Voltage with Respect to GND
–0.5 to +7
V
VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC+0.5 V
TSTG Storage Temperature
–65 to +150
°C
IOUT
DC Output Current
–60 to +120
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage may exceed
Vcc by +0.5V unless otherwise noted.
2. Inputs and Vcc terminals only.
3. Output and I/O terminals only.
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
6
10 pF
COUT
Output Capacitance VOUT = 0V
8
12 pF
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
Description
I0A–I0D
Source 0 Data Inputs
I1A–I1D
Source 1 Data Inputs
OE
Output Enable (Active LOW)
S
Select Input
ZA–ZD
Outputs
FUNCTION TABLE(1)
Inputs
OE
S
I0
I1
H
X
X
X
L
H
X
L
L
H
X
H
L
L
L
X
L
L
H
X
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High-Impedance
Output Zx
Z
L
H
L
H
2
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