BC817-40-7-F(2009) 查看數據表（PDF） - Diodes Incorporated.
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BC817-40-7-F Datasheet PDF : 4 Pages
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400
300
200
100
RθSB = 320°C/W
0
0
100
200
TSB, SUBSTRATE TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Substrate Temperature (Note 1)
100
80
60
40
BC817-16 / -25 / -40
500
400
300
200
100
0
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1,000 VCE = 1V
100
150° C
TA = 25°C
-50° C
20
0
0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
0.5
typical
limits
at TA = 25°C
0.4
IC / IB = 10
0.3
0.2
10
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1,000
100
25° C
0.1
150° C
-50° C
0
0.1
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
10
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Gain-Bandwidth Product vs. Collector Current
BC817-16 / -25 / -40
Document number: DS11107 Rev. 18 - 2
2 of 4
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April 2009
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