IL485W-G 查看數據表（PDF） - RHOPOINT COMPONENTS
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IL485W-G Datasheet PDF : 9 Pages
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IL485W
Receiver Section
Electrical specifications are Tmin to Tmax and VDD = 4.5 V to = 5.5 V unless otherwise stated.
Parameters
Symbol
Min.
Typ.(5)
Positive-going Input
Threshold Voltage
VIT+
Negative-going Input
Threshold Voltage
VIT-
−0.2
Hysteresis Voltage (VIT+ − VIT-)
VHYS
60
High Level Digital Output Voltage
VOH
VDD − 0.2
Max.
0.2
Low Level Digital Output Voltage
VOL
0.2
High-impedance-state output current
IOZ
±20
1
Line Input Current(8)
II
−0.8
Input Resistance
Supply Current
Parameters
Maximum Data Rate
Propagation Delay(9)
Pulse Skew(10)
Skew Limit(3)
Output Enable Time To High Level
Output Enable Time To Low Level
Output Disable Time From High Level
Output Disable Time From Low Level
rI
IDD2
Symbol
tPD
12
20
27
Switching Characteristics
Min.
Typ.(5)
35
24
tSK(P)
1
tSK(LIM)
2
tPZH
17
tPZL
30
tPHZ
30
tPLZ
18
34
Max.
32
6
8
24
45
45
27
Magnetic Field Immunity(11)
Power Frequency Magnetic Immunity
Pulse Magnetic Field Immunity
Damped Oscillatory Magnetic Field
Cross-axis Immunity Multiplier(12)
Power Frequency Magnetic Immunity
Pulse Magnetic Field Immunity
Damped Oscillatory Magnetic Field
Cross-axis Immunity Multiplier(12)
Magnetic Field Immunity at 5 V
HPF
2800
3500
HPM
4000
4500
HOSC
KX
4000
4500
2.5
Magnetic Field Immunity at 3.3 V
HPF
1000
1500
HPM
1800
2000
HOSC
1800
2000
KX
2.5
Units
V
V
mV
V
V
μA
mA
kΩ
mA
Units
Mbps
ns
ns
ns
ns
ns
ns
ns
Test Conditions
VO = 2.7 V,
IO = −0.4 mA
VO = 0.5 V,
IO = 8 mA
VID = 200 mV
IOH = −20 μA
VID = −200 mV
IOH = 20 μA
VO = 0.4 to (VDD2−0.5) V
VI = 12 V
VI = −7 V
Other Input(11) = 0 V
No load
Outputs Enabled
Test Conditions
RL = 54 Ω, CL = 50 pF
VO = −1.5 V to 1.5 V,
CL = 15 pF
VO = −1.5 V to 1.5 V,
CL = 15 pF
RL = 54 Ω, CL = 50 pF
CL = 15 pF
CL = 15 pF
CL = 15 pF
CL = 15 pF
A/m 50Hz/60Hz
A/m
tp = 8µs
A/m
0.1Hz – 1MHz
A/m
50Hz/60Hz
A/m
tp = 8µs
A/m
0.1Hz – 1MHz
Electrostatic Discharge Sensitivity
This product has been tested for electrostatic sensitivity to the limits stated in the specifications. However, NVE recommends that all integrated
circuits be handled with appropriate care to avoid damage. Damage caused by inappropriate handling or storage could range from performance
degradation to complete failure.
5
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