ILX553B 查看數據表（PDF） - Sony Semiconductor

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ILX553B

5150-pixel CCD Linear Sensor (B/W)

Sony Semiconductor 

ILX553B

Electrooptical Characteristics (Note 1)

Ta = 25°C, VDD = 12V, fφR = 2MHz, Input clock = 5Vp-p,

Light source = 3200K, IR cut filter CM-500S (t = 1.0mm)

Item

Sensitivity

Sensitivity nonuniformity

Saturation output voltage

Saturation exposure

Dark voltage average

Dark signal nonuniformity

Image lag

Supply current

Total transfer efficiency

Output impedance

Offset level

Symbol

R

PRNU

VSAT

SER

VDRK

DSNU

IL

IVDD

TTE

ZO

VOS

Min.

11.8

—

1

—

—

—

—

—

92

—

—

Typ.

14.8

4

2

0.14

0.3

0.6

0.02

15

98

230

6.2

Max.

17.8

10

—

—

2

3

—

30

—

—

—

Unit

V/(lx · s)

%

V

lx · s

mV

mV

%

mA

%

Ω

V

Remarks

Note 2

Note 3

Note 4

Note 5

Note 6

Note 7

—

—

—

Note 8

Notes

1) In accordance with the given electrooptical characteristics, the even black level is defined as the average

value of D14, D15, to D62.

2) For the sensitivity test light is applied with a uniform intensity of illumination.

3) PRNU is defined as indicated below. Ray incidence conditions are the same as for Note 2.

VOUT = 500mV (Typ.)

PRNU = (VMAX – VMIN)/2 × 100 [%]

VAVE

The maximum output of 5150 pixels is set to VMAX, the minimum output to VMIN and the average output to

VAVE.

4) Use below the minimum value of the saturation output voltage.

5) Saturation exposure is defined as follows.

SE = VSAT

R

6) Optical signal accumulated time τ int stands at 10ms.

7) VOUT = 500mV (Typ.)

8) VOS is defined as indicated bellow.

VOUT

VOS

GND

–3–

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