IMH14A(2013) 查看數據表（PDF） - ROHM Semiconductor

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IMH14A
(Rev.:2013)

NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

UMH14N / IMH14A

lElectrical characteristic curves (Ta = 25°C) <For DTr1 and DTr2 in common>

Data Sheet

Fig.1 Grounded emitter propagation

characteristics

10

VCE=5V

1

0.1

Ta=100ºC

25ºC

-40ºC

0.01

0.001

0

0.5

1

1.5

2

BASE TO EMITTER VOLTAGE : VBE [V]

Fig.2 Grounded emitter output

characteristics

50

IB= 200mA

40

30

20

180mA

160mA

140mA

120mA

100mA

80mA

60mA

10

0

0

40mA

20mA

Ta=25ºC

0A

5

10

COLLECTOR TO EMITTER VOLTAGE : VCE [V]

Fig.3 DC Current gain

vs. Collector Current

Fig.4 Collector-emitter saturation voltage

vs. Collector Current

COLLECTOR CURRENT : IC [mA]

COLLECTOR CURRENT : IC [mA]

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3/5

2013.07 - Rev.B

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