UMX2N 查看數據表（PDF） - ROHM Semiconductor
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UMX2N Datasheet PDF : 3 Pages
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Transistors
EMW2 / EMX2 / EMX3 / UMW2N /UMX2N /
UMX3N / FMW2 / IMX2 / IMX3
General purpose (dual transistors)
EMW2 / EMX2 / EMX3 / UMW2N / UMX2N /
UMX3N / FMW2 / IMX2 / IMX3
zFeatures
1) Two 2SC2412AK chips in a EMT or UMT or SMT package.
zEquivalent circuit
EMW2 / UMW2N FMW2
EMX2 / UMX2N IMX2
EMX3 / UMX3N IMX3
(3) (2) (1)
(3) (4) (5)
(3) (2)
(1)
(4) (5)
(6)
(3) (2) (1)
(4) (5) (6)
(4)
(5)
(2)
(1)
(4) (5) (6)
(3) (2) (1)
(4)
(5) (6)
(3)
(2) (1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N
dissipation
FMW2 / IMX2 / IMX3
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
50
7
150
150(TOTAL)
300(TOTAL)
150
−55~+150
Unit
V
V
V
mA
∗1
mW
∗2
°C
°C
zElectrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
60
−
−
V
IC=50µA
50
−
−
V
IC=1mA
7
−
−
V
IE=50µA
−
−
0.1
µA VCB=60V
−
−
0.1
µA
VEB=7V
−
−
0.4
V
IC/IB=50mA/5mA
120
−
560
−
VCE=6V, IC=1mA
−
180
−
MHz VCE=12V, IE=−2mA, f=100MHz ∗
−
2
3.5
pF VCB=12V, IE=0mA, f=1kHz
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMW2
EMT5
W2
T2R
8000
EMX2
EMT6
X2
T2R
8000
EMX3
EMT6
X3
T2R
8000
UMW2N
UMT5
W2
TR
3000
UMX2N
UMT6
X2
TR
3000
UMX3N
UMT6
X3
TR
3000
FMW2
SMT5
W2
T148
3000
IMX2
SMT6
X2
T108
3000
IMX3
SMT6
X3
T108
3000
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