IMX9 查看數據表（PDF） - ROHM Semiconductor
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IMX9 Datasheet PDF : 4 Pages
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Transistors
IMX9
2000
1000
500
IC/IB=25
Measured using
pulse current.
200
100
Ta=100°C
50
25°C
−25°C
20
10
5
2
1 2 5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
10000
5000
2000
1000
500
IC/IB=10
25
50
100
Ta=25°C
Pulsed
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)
10000
5000
2000
1000
500
Ta=−25°C
25°C
100°C
lC/lB=10
Measured using
pulse current.
200
100
50
20
10
12
5 10 20 50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.9 Base-emitter saturation voltage
vs. collector current (ΙΙ)
10000
5000
2000
1000
500
Ta=25°C
VCE=10V
Measured using
pulse current.
200
100
50
20
10
−1 −2 −5 −10 −20 −50 −100−200 −500−1000
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.11 Collector output capacitance
vs. collector-base voltage
100
Ta=25°C
50
f=1kHz
Vi=100mV(rms)
20
RL=1kΩ
10
5
2
1
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2 0.5 1 2
BASE CURRENT : IB (mA)
5 10
Fig.12 Output-on resistance vs.
base current
zRon measurement circuit
RL=1kΩ
Input
Vi
IB
1kHz
100mV(rms)
V
Output
V0
Ron= V0 ×RL
Vi-V0
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