IRF520NS 查看數據表（PDF） - International Rectifier

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IRF520NS

HEXFET® Power MOSFET

International Rectifier 

IRF520NS/L

15V

VDS

L

D R IV E R

RG

20V

tp

D .U .T

IA S

0 .0 1Ω

+

- VD D

A

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

200

ID

TOP

2 .3 A

4.0A

160

BOTTOM 5.7A

120

80

40

0 VDD = 25V

25

50

75

A

100

125

150

175

Starting TJ , Junction Tem perature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

10 V

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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