IRF5210LPBF 查看數據表（PDF） - International Rectifier

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IRF5210LPBF

HEXFET®Power MOSFET

International Rectifier 

40

35

30

25

20

15

10

5

0

25

50

75

100 125 150

TC , Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Case Temperature

IRF5210S/LPbF

VDS

VGS

RG

RD

D.U.T.

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

-

+ VDD

Fig 10a. Switching Time Test Circuit

VGS

10%

td(on) tr

td(off) tf

90%

VDS

Fig 10b. Switching Time Waveforms

1

D = 0.50

0.1

0.01

0.20

0.10

0.05

0.02

0.01

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci= τi/Ri

R2R2

τ2 τ2

R3R3

Ri (°C/W) τι (sec)

τCτ 0.128309 0.000069

τ3 τ3

0.377663 0.001772

0.244513 0.010024

0.001

1E-006

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-005

0.0001

0.001

0.01

0.1

1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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