IRF6N40 查看數據表（PDF） - Suntac Electronic
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IRF6N40 Datasheet PDF : 3 Pages
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IRF6N40
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POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Drain-Source Leakage Current
(VDS = 400V, VGS = 0 V)
(VDS = 400V, VGS = 0 V, TJ = 125к)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4)
Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 200 V, ID = 6 A,
RG = 9.1ȍ, VGS = 10 V) (Note 4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 320V, ID = 6A
VGS = 10 V) (Note 4)
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
Reverse Recovery Time
IF = 6A, di/dt = 100A/µs , TJ = 25к
(Note 4)
Diode Forward Voltage
IS = 6A, VGS = 0 V, TJ = 25к (Note 4)
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 50V, starting TJ = 25к, L=24mH, RG = 25ȍ, IAS = 4.5A
(3) ISD Љ 4.5A, di/dt Љ 75A/µs, VDD Љ V(BR)DSS, TJ Љ 150к
(4) Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
Qrr
ton
trr
VSD
CIRF6N40
Min
Typ
Max
400
25
100
100
-100
2.0
4.0
1.0
2.9
515
720
185
260
15
30
7
10
11
20
19
40
10
20
9.5
2
3
4.5
7.5
Units
V
ӴA
nA
nA
V
ȍ
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
1.6
µC
**
270
ns
1.5
V
Page 2
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