SIHF740-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHF740-E3 Datasheet PDF : 9 Pages
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IRF740, SiHF740
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 6.0 Ab
VDS = 50 V, ID = 6.0 Ab
400
-
-
V
-
0.49
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.55
Ω
5.8
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1400
-
-
330
-
pF
-
120
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
-
63
ID = 10 A, VDS = 320 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
-
-
9.0
nC
Qgd
-
-
32
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 200 V, ID = 10 A
Rg = 9.1 Ω, RD = 20 Ω, see fig. 10b
-
14
-
-
27
-
ns
-
50
-
-
24
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
D
6 mm (0.25") from
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
ISM
integral reverse
p - n junction diode
D
G
S
-
-
10
A
-
-
40
Body Diode Voltage
VSD
TJ = 25 °C, IS = 10 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb
370
790
ns
Qrr
-
3.8
8.2
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
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Document Number: 91054
S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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