SIHF744 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
SIHF744 Datasheet PDF : 8 Pages
| |||
IRF744, SiHF744
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20
VDS = 450 V, VGS = 0 V
VDS = 360 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.3 Ab
VDS = 50 V, ID = 5.3 Ab
Input Capacitance
Ciss
VGS = 0 V
Output Capacitance
Coss
VDS = 25 V
Reverse Transfer Capacitance
Crss
f = 1.0 MHz, see fig. 5
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
ID = 8.8 A, VDS = 360 V,
Qgs
VGS = 10 V
see fig. 6 and 13b
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = 225 V, ID = 8.8 A
RG = 9.1 Ω, RD = 25 Ω, see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
MOSFET symbol
showing the
integral reverse
ISM
p - n junction diode
D
G
S
MIN.
450
-
2.0
-
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.59
-
V/°C
-
4.0
V
-
± 100 nA
-
25
µA
-
250
-
0.63
Ω
-
-
S
1400
-
370
-
pF
140
-
-
80
-
12
nC
-
41
8.7
-
28
-
ns
58
-
27
-
4.5
-
nH
7.5
-
-
8.8
A
-
35
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8.8 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
TJ = 25 °C, IF = 8.8 A, dI/dt = 100 A/µsb
490
740
ns
Qrr
-
3.2
4.8
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91056
S-Pending-Rev. A, 19-Jun-08
Share Link: 