IRFB13N50APBF 查看數據表（PDF） - International Rectifier

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IRFB13N50APBF

HEXFET Power MOSFET

International Rectifier 

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

10

5.0V

BOTTOM 4.5V

1

4.5V

0.1

0.01

0.1

20µs PULSE WIDTH

T J= 25 ° C

1

10

100

V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

IRFB13N50APbF

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

1

4.5V

0.1

0.1

20µs PULSE WIDTH

T J= 150 ° C

1

10

100

V DS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ= 150 °C

10

TJ = 25 °C

1

0.1

4

V DS= 50V

20µs PULSE WIDTH

6

8

10

12

14

16

V GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.0

I D = 14A

2.5

2.0

1.5

1.0

0.5

V GS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature

( ° C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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