IRFBC40S(2011) 查看數據表（PDF） - Vishay Semiconductors
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IRFBC40S Datasheet PDF : 11 Pages
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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case
RthJC
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 100 V, ID = 3.7 Ab
600
-
-
V
-
0.70
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
100
μA
-
-
500
-
-
1.2
4.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5c
-
1300
-
-
160
-
pF
-
30
-
-
VGS = 10 V
ID = 6.2 A, VDS = 480 V,
see fig. 6 and 13b, c
-
-
-
60
-
8.3
nC
-
30
VDD = 300 V, ID = 6.2 A,
Rg = 9.1 , RD = 47 ,
see fig. 10b, c
-
13
-
-
18
-
ns
-
55
-
-
20
-
Between lead, and center of die contact
-
7.5
-
nH
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
6.2
A
-
-
25
Body Diode Voltage
VSD
TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb
-
-
1.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
450
940
ns
TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb
Qrr
-
3.8
7.9
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRFBC40, SiHFBC40 data and test conditions.
www.vishay.com
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Document Number: 91116
S11-1053-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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