SIHFD220 查看數據表（PDF） - Vishay Semiconductors

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SIHFD220

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRFD220, SiHFD220

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

200

VGS = 10 V

14

3.0

7.9

Single

0.80

D

HVMDIP

S

G

D

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• For Automatic Insertion

• End Stackable

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The 4 pin DIP package is a low cost machine-insertable

case style which can be stacked in multiple combinations on

standard 0.1" pin centers. The dual drain serves as a thermal

link to the mounting surface for power dissipation levels up

to 1 W.

HVMDIP

IRFD220PbF

SiHFD220-E3

IRFD220

SiHFD220

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TA = 25 °C

TA = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TA = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 152 mH, Rg = 25 , IAS = 1.6 A (see fig. 12).

c. ISD  5.2 A, dI/dt  95 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

LIMIT

200

± 20

0.80

0.50

6.4

0.0083

260

5.2

0.10

1.0

5.0

- 55 to + 150

300d

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91131

S10-2462-Rev. C, 08-Nov-10

www.vishay.com

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