IRFD220 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
IRFD220 Datasheet PDF : 9 Pages
| |||
IRFD220, SiHFD220
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
RthJA
TYP.
-
MAX.
120
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 0.48 Ab
VDS = 50 V, ID = 0.48 Ab
200
-
-
V
-
0.29
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.80
0.60
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 4.8 A, VDS = 160 V,
see fig.6 and 13b
-
-
-
VDD = 100 V, ID = 4.8 A,
-
Rg = 18 , RD = 19
see fig. 10b
-
-
Between lead,
6 mm (0.25") from
D
-
package and center of
G
die contact
-
S
260
-
100
-
pF
30
-
-
14
-
3.0
nC
-
7.9
7.2
-
22
-
ns
19
-
13
-
4.0
-
nH
6.0
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
0.80
A
-
-
6.4
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 0.80 A, VGS = 0 Vb
-
-
1.8
V
trr
-
150
300
ns
TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μsb
Qrr
-
0.91 1.8
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
www.vishay.com
2
Document Number: 91131
S10-2462-Rev. C, 08-Nov-10
Share Link: 