IRFP2410 查看數據表（PDF） - International Rectifier
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IRFP2410 Datasheet PDF : 8 Pages
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IRFP2410
8000
6000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
Ciss
4000
Coss
2000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 37A
16
12
VDS = 80V
VDS = 50V
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
TJ = 25°C
TJ = 175°C
100
10
0.0
VGS = 0V A
1.0
2.0
3.0
4.0
5.0
6.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
100µs
1ms
10
10ms
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
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