IRFPC60LC-P 查看數據表（PDF） - International Rectifier
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IRFPC60LC-P Datasheet PDF : 8 Pages
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PD - 99438
HEXFET® Power MOSFET
IRFPC60LC-P
l Ultra Low Gate Charge
D
l Reduced Gate Drive Requirement
l Enhanced 30V Vgs Rating
l Reduced Ciss, Coss, Crss
G
l Isolated Central Mounting Hole
l Dynamic dv/dt Rated
l Repetitive Avalanche Rated
S
Description
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs
achieve significantly lower gate charge over conventional MOSFETs. Utilizing
advanced Hexfet technology the device improvements allow for reduced gate
drive requirements, faster switching speeds and increased total system savings.
These device improvements combined with the proven ruggedness and reliability
of HEXFETs offer the designer a new standard in power transistors for switching
applications.
VDSS = 600V
RDS(on) = 0.40Ω
ID = 16A
Surface Mountable
TO-247
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
16
10
64
280
2.2
±30
1000
16
28
3.0
-55 to + 150
225
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
40
Units
°C/W
1
04/25/02
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