IRFPS43N50KPBF 查看數據表（PDF） - Vishay Semiconductors
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IRFPS43N50KPBF Datasheet PDF : 8 Pages
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IRFPS43N50K, SiHFPS43N50K
Vishay Siliconix
1000000
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 ID = 48A
15
VDS= 400V
VDS= 250V
VDS= 100V
10
5
0
0 50 100 150 200 250 300 350
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.2
V GS = 0 V
0.7
1.2
1.7
2.2
VSD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1ms
TC= 25 °C
TJ = 150 °C
Single Pulse
1
10
100
10ms
1000
VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91262
S-81367-Rev. B, 21-Jul-08
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