IRFR320(2014) 查看數據表（PDF） - Vishay Semiconductors
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IRFR320 Datasheet PDF : 12 Pages
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www.vishay.com
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
1.8
20
3.3
11
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
GS
GD S
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR320,SiHFR320)
• Straight lead (IRFU320,SiHFU320)
• Available in tape and reel
Available
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHFR320-GE3
Lead (Pb)-free
IRFR320PbF
SiHFR320-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR320TRL-GE3a
IRFR320TRLPbFa
SiHFR320TL-E3a
DPAK (TO-252)
SiHFR320TR-GE3 a
IRFR320TRPbF a
SiHFR320T-E3 a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12).
c. ISD ≤ 3.1 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
DPAK (TO-252)
-
IRFR320TRRPbF a
SiHFR320TR-E3 a
LIMIT
400
± 20
3.1
2.0
12
0.33
0.020
160
3.1
4.2
42
2.5
4.0
-55 to +150
260
IPAK (TO-251)
SiHFU320-GE3
IRFU320PbF
SiHFU320-E3
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-2355-Rev. E, 08-Dec-14
1
Document Number: 91273
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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