IRFR320(2014) 查看數據表（PDF） - Vishay Semiconductors

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IRFR320
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

IRFR320, IRFU320, SiHFR320, SiHFU320

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- V DD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

VGS

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S14-2355-Rev. E, 08-Dec-14

6

Document Number: 91273

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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