IRFR320(2014) 查看數據表（PDF） - Vishay Semiconductors

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IRFR320
(Rev.:2014)

Power MOSFET

Vishay Semiconductors 

www.vishay.com

VERSION 2: FACILITY CODE = N

E

b3

e

e

A

c2

Package Information

Vishay Siliconix

E1

E1/2

DIM.

A

A1

b

b1

b2

b3

c

c1

c2

D

D1

E

E1

e

H

2x b2

2x e

(3°)

3x b

0.25

(3°)

GAUGE

PLANE

CAB

C

C

L

(L1)

DETAIL "B"

(b)

H

b1

SEATING

C PLANE

DETAIL "B"

MILLIMETERS

MIN.

MAX.

2.18

2.39

-

0.13

0.65

0.89

0.64

0.79

0.76

1.13

4.95

5.46

0.46

0.61

0.41

0.56

0.46

0.60

5.97

6.22

5.21

-

6.35

6.73

4.32

-

2.29 BSC

9.94

10.34

MILLIMETERS

DIM.

MIN.

MAX.

L

1.50

1.78

L1

2.74 ref.

L2

0.51 BSC

L3

0.89

1.27

L4

-

1.02

L5

1.14

1.49

L6

0.65

0.85



0°

10°

1

0°

15°

2

25°

35°

Notes

• Dimensioning and tolerance confirm to ASME Y14.5M-1994

• All dimensions are in millimeters. Angles are in degrees

• Heat sink side flash is max. 0.8 mm

• Radius on terminal is optional

ECN: E19-0649-Rev. Q, 16-Dec-2019

DWG: 5347

Revision: 16-Dec-2019

2

Document Number: 71197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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