IRFZ46NLPBF 查看數據表（PDF） - International Rectifier
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IRFZ46NLPBF Datasheet PDF : 10 Pages
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IRFZ46NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID =1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– ––– .0165 Ω VGS =10V, ID = 28A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
19 ––– ––– S VDS = 25V, ID = 28A
IDSS
Drain-to-Source Leakage Current
––– ––– 25 µ A VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg
Total Gate Charge
––– ––– 72
ID = 28A
Qgs
Gate-to-Source Charge
––– ––– 11 nC VDS = 44V
Qgd
Gate-to-Drain ("Miller") Charge
––– ––– 26
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 28V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 76 ––– ns ID = 28A
––– 52 –––
RG = 12Ω
tf
Fall Time
––– 57 –––
RD = 0.98Ω, See Fig. 10
LS
Internal Source Inductance
–––
7.5 –––
nH
Between lead,
and center of die contact
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
––– 1696 –––
––– 407 ––– pF
––– 110 –––
––– 583 152
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 28A, L = 389mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 53
A showing the
integral reverse
G
––– ––– 180
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V
––– 67 101 ns TJ = 25°C, IF = 28A
––– 208 312 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 389µH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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