HYS72V4120GU-10 查看數據表（PDF） - Siemens AG

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HYS72V4120GU-10

3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules

Siemens AG 

3.3V 4M x 64-Bit 2 BANK SDRAM Module

3.3V 4M x 72-Bit 2 BANK SDRAM Module

168 pin unbuffered DIMM Modules

HYS64V4120GU-10

HYS72V4120GU-10

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

• 2 bank 4M x 64, 4M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• Fully PC66 layout compatible

• JEDEC standard Synchronous DRAMs (SDRAM)

• Performance:

fCK

Max. Clock frequency

tAC

Max. access time from clock

-10

66 MHz @ CL=2

100 MHz @ CL=3

9 ns @ CL=2

8 ns @ CL=3

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E2PROM

• Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• Gold contact pad

• Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU

Semiconductor Group

1

2.98

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