IRHM3130 查看數據表（PDF） - International Rectifier

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IRHM3130

RADIATION HARDENED POWER MOSFET THRU-HOLE

International Rectifier 

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IRHM7130

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of

VGSS Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response

of Rad Hard HEXFET During 1x1012

Rad (Si)/Sec Exposure

www.irf.com

Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation

5

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