IRHM3160 查看數據表（PDF） - International Rectifier

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IRHM3160

100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA)

International Rectifier 

Pre-Irradiation

IRHM7160, JANSR2N7432

10000

8000

6000

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

4000

Coss

2000

0

1

Crss

10

100

VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20 ID = 35A

16

VDS = 80V

VDS = 50V

VDS = 20V

12

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0 40 80 120 160 200 240 280

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1000

100

TJ = 150° C

10

TJ = 25° C

VGS = 0 V

1

0.4

0.8

1.2

1.6

2.0

2.4

VSD ,Source-to-Drain Voltage (V)

1000

100

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µs

1ms

10

Tc = 25°C

Tj = 150°C

Single Pulse

1

1

10

10ms

100

VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

www.irf.com

Fig 8. Maximum Safe Operating Area

5

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