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IRKN4110AS90 查看數據表(PDF) - International Rectifier

零件编号
产品描述 (功能)
生产厂家
IRKN4110AS90
IR
International Rectifier IR
IRKN4110AS90 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
VRRM , maximum
repetitive
peak reverse voltage
V
VRSM , maximum VDRM , max. repetitive
non-repetitive peak off-state voltage,
peak reverse voltage gate open circuit
V
V
04
400
500
400
06
600
700
600
08
800
900
800
IRK.41/ .56
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IRK.41
IRK.56
Units Conditions
IT(AV) Max. average on-state
current (Thyristors)
IF(AV) Maximum average
forward current (Diodes)
IO(RMS)
Max. continuous RMS
on-state current.
As AC switch
ITSM Max. peak, one cycle
or non-repetitive on-state
IFSM or forward current
I2t Max. I2t for fusing
I2t Max. I2t for fusing (1)
45
45
100
850
890
715
750
940
985
3.61
3.30
2.56
2.33
4.42
4.03
36.1
60
60
135
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
180o conduction, half sine wave,
TC = 85oC
A
KA2s
KA2s
or
I(RMS)
I(RMS)
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
Sinusoidal
half wave,
Initial TJ = TJ max.
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
t=10ms 100% VRRM
t=8.3ms reapplied
Initial TJ = TJ max.
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold
voltage (2)
rt
Max. value of on-state
slope resistance (2)
VTM Max. peak on-state or
VFM forward voltage
di/dt Max. non-repetitive rate
of rise of turned on
current
IH Max. holding current
IL
Max. latching current
0.88
0.91
5.90
5.74
1.81
0.85
0.88
3.53
3.41
1.54
150
200
400
V
m
V
A/µs
mA
Low level (3)
High level (4)
TJ = TJ max
Low level (3)
High level (4)
TJ = TJ max
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = 25°C
TJ = 25oC, from 0.67 VDRM,
ITM =π x , IT(AV) Ig = 500mA,
tr < 0.5 µs, tp > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
(1) I2t for time tx = I2t x tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
2
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