IRKN4110AS90 查看數據表（PDF） - International Rectifier

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IRKN4110AS90

ADD-A-pakTM GEN V Power Modules

International Rectifier 

Triggering

IRK.41, .56 Series

Bulletin I27131 rev. G 10/02

Parameters

PGM Max. peak gate power

PG(AV) Max. average gate power

IGM

-VGM

Max. peak gate current

Max. peak negative

gate voltage

VGT Max. gate voltage

required to trigger

IGT Max. gate current

required to trigger

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

Blocking

IRK.41

10

2.5

2.5

IRK.56

10

2.5

2.5

10

4.0

2.5

1.7

270

150

80

0.25

6

Units

W

A

Conditions

V

TJ = - 40°C

Anode supply = 6V

TJ = 25°C

TJ = 125°C

resistive load

TJ = - 40°C

Anode supply = 6V

mA

TJ = 25°C

resistive load

TJ = 125°C

V

TJ = 125oC,

rated VDRM applied

mA

TJ = 125oC,

rated VDRM applied

Parameters

IRK.41

IRK.56

Units

Conditions

IRRM Max. peak reverse and

IDRM off-state leakage current

15

mA

at VRRM, VDRM

2500 (1 min)

VINS RMS isolation voltage

3500 (1 sec)

V

dv/dt Max. critical rate of rise

500

of off-state voltage (5)

V/µs

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.

Thermal and Mechanical Specifications

TJ = 125 oC, gate open circuit

50 Hz, circuit to base, all terminals

shorted

TJ = 125oC, linear to 0.67 VDRM,

gate open circuit

Parameters

IRK.41

IRK.56

Units

Conditions

TJ Junction operating

temperature range

Tstg

RthJC

Storage temp. range

Max. internal thermal

resistance, junction

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar

wt Approximate weight

- 40 to 125

- 40 to 125

0.23

0.20

0.1

5

3

110 (4)

°C

K/W

Per module, DC operation

Mounting surface flat, smooth and greased

Nm

gr (oz)

A mounting compound is recommended

and the torque should be rechecked after a

period of 3 hours to allow for the spread of

the compound

Case style

TO-240AA

JEDEC

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Devices

IRK.41

IRK.56

180o

0.11

0.09

Sine half wave conduction

120o

0.13

0.11

90o

0.17

0.13

60o

0.23

0.18

30o

0.34

0.27

Rect. wave conduction

180o

0.09

0.07

120o

0.14

0.11

90o

0.18

0.14

60o

0.23

0.19

30o

0.34

0.28

Units

°C/W

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