IRLU3717 查看數據表（PDF） - International Rectifier

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IRLU3717

HEXFET Power MOSFET

International Rectifier 

IRLR/U3717

1000

100

10

TOP

BOTTOM

VGS

10V

6.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

1

0.1

0.01

0.1

2.5V

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000

100

TOP

BOTTOM

VGS

10V

6.0V

4.5V

4.0V

3.5V

3.0V

2.8V

2.5V

10

2.5V

1.0

0.1

20µs PULSE WIDTH

Tj = 175°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 175°C

10

TJ = 25°C

1

VDS = 25V

20µs PULSE WIDTH

0.1

0

2

4

6

8

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0

ID = 30A

VGS = 10V

1.5

1.0

0.5

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

vs. Temperature

3

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