IS25C08B 查看數據表（PDF） - Integrated Silicon Solution

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IS25C08B

8K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM

Integrated Silicon Solution 

IS25C08B

DC ELECTRICAL CHARACTERISTICS

Ta = –40°C to +85°C (Industrial)

Symbol Parameter1

Vcc

Test Conditions

Icc

Operating Current

1.8V

Read/Write at 5 MHz

2.5V

Read/Write at 10 MHz

5V

Read/Write at 20 MHz

Isb

Standby Current

1.8V

Vin = Vcc or GND

CS = Vcc

2.5V

Vin = Vcc or GND

CS = Vcc

5V

Vin = Vcc or GND

CS = Vcc

Vol

Output LOW Voltage

1.8V

Iol = 0.15 mA

2.5V

Iol = 1.5 mA

5V

Iol = 2 mA

VoH

Output HIGH Voltage 1.8V

Ioh = -0.1mA

2.5V

Ioh = -0.4mA

5V

Ioh = -2mA

Vih

Input HIGH Voltage

Vil

Input LOW Voltage

Ili

Input Leakage Current

Ilo

Output Leakage Current

Vin = 0V to Vcc

Vout = 0V to Vcc, CS = Vcc

Note:

1. The parameters are characterized but not 100% tested.

Min.

Max.

Unit

—

1.0

mA

—

3.0

mA

—

5.0

mA

—

1.0

µA

—

2.0

µA

—

3.0

µA

—

0.2

V

—

0.4

V

—

0.4

V

0.8 x Vcc

—

V

0.8 x Vcc

—

V

0.8 x Vcc

—

V

0.7x Vcc Vcc + 1

V

-0.3 0.3 x Vcc

V

-2

2

µA

-2

2

µA

8

Integrated Silicon Solution, Inc.

Preliminary Information  Rev.  00A

08/25/09

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