IS25C16B 查看數據表（PDF） - Integrated Silicon Solution
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IS25C16B Datasheet PDF : 17 Pages
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IS25C16B
DC ELECTRICAL CHARACTERISTICS
Ta = –40°C to +85°C (Industrial)
Symbol Parameter
Vcc
Test Conditions
Icc1
Operating Current 1.8V
Read/Write at 2 MHz
2.5V
Read/Write at 5 MHz
Isb1
Standby Current
5V
1.8V
2.5V
5.0V
Read/Write at 10 MHz
Vin = Vcc or GND, CS = Vcc
Vin = Vcc or GND, CS = Vcc
Vin = Vcc or GND, CS = Vcc
Vol
Output LOW Voltage 1.8V
Iol = 0.15 mA
2.5V
Iol = 1.5 mA
5V
Iol = 2 mA
VoH
Output HIGH Voltage 1.8V
Ioh = -0.1mA
2.5V
Ioh = -0.4mA
5V
Ioh = -2 mA
Vih
Input HIGH Voltage
Vil
Input LOW Voltage
Ili
Input Leakage Current
Ilo
Output Leakage Current
Vin = 0V to Vcc
Vout = 0V to Vcc, CS = Vcc
Notes: The parameters are characterized, but not 100% tested.
Min.
—
—
—
—
—
—
—
—
—
0.8 x Vcc
0.8 x Vcc
0.8 x Vcc
0.7x Vcc
-0.3
-2
-2
Max. Unit
1.0 mA
3.0 mA
5.0 mA
1.0 µA
2.0 µA
3.0 µA
0.2
V
0.4
V
0.4
V
—
V
—
V
—
V
Vcc + 1 V
0.3 x Vcc V
2
µA
2
µA
8
Integrated Silicon Solution, Inc.
Preliminary Information Rev. 00A
08/28/09
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