IS25C32B 查看數據表（PDF） - Integrated Silicon Solution

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IS25C32B

32K-BIT SPI AUTOMOTIVE EEPROM

Integrated Silicon Solution 

IS25C32B-Automotive

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter

Value

Unit

Vs

Supply Voltage

-0.5 to + 6.5

V

Vp

Voltage on Any Pin

–0.5 to Vcc + 0.5 V

Tbias

Temperature Under Bias

–55 to +125

°C

Tstg

Storage Temperature

–65 to +150

°C

Iout

Output Current

5

mA

Notes:

Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions outside those indicated in the operational sections of this speci-

fication is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

OPERATING RANGE (IS25C32B-3)

Vcc

Ambient Temperature Grade

2.7V to 3.6V

–40°C to +125°C

Automotive (A3)

CAPACITANCE(1,2)

Symbol Parameter

Cin

Input Capacitance

Conditions

Vin = 0V

Max.

6

Unit

pF

Cout

Output Capacitance

Vout = 0V

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters and not

100% tested.

2. Test conditions: Ta = 25°C, f = 1 MHz, Vcc = 3.3V.

DC ELECTRICAL CHARACTERISTICS

Ta = –40°C to +125°C (Automotive)

Symbol Parameter*

Test Conditions

Vol

Output LOW Voltage

Vcc = 3.3V, Iol = 2 mA

VoH

Output HIGH Voltage

Vcc = 3.3V, Ioh = -2 mA

Vih

Input HIGH Voltage

Vil

Input LOW Voltage

Ili

Input Leakage Current

Ilo

Output Leakage Current

Vin = 0V to Vcc

Vout = 0V to Vcc, CS = Vcc

Icc

Operating Current

Read/Write at 10 MHz

Isb

Standby Current

Vcc =3.3V, Vin = Vcc or GND

CS = Vcc

Note: The parameters are characterized but not 100% tested

Min.

Max.

—

0.4

0.8 x Vcc

—

0.7x Vcc Vcc + 1

-0.3 0.3 x Vcc

-2

2

-2

2

—

4.0

—

5.0

Unit

V

V

V

V

µA

µA

mA

µA

Integrated Silicon Solution, Inc. — www.issi.com

7

Advanced Information  Rev.  00B

08/27/09

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