ISL8488E 查看數據表（PDF） - Intersil
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ISL8488E Datasheet PDF : 13 Pages
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ISL8488E, ISL8489E, ISL8490E, ISL8491E
Typical Performance Curves VCC = 5V, TA = +25°C; Unless Otherwise Specified.
DI
5
RO
0
RDIFF = 54Ω, CL = 100pF
5
0
DI
5
RO
0
RDIFF = 54Ω, CL = 100pF
5
0
4
Z
3
2Y
1
0
TIME (20ns/DIV)
FIGURE 16. DRIVER AND RECEIVER WAVEFORMS,
LOW TO HIGH (ISL8490E/ISL8491E)
4
Y
3
2Z
1
0
TIME (20ns/DIV)
FIGURE 17. DRIVER AND RECEIVER WAVEFORMS,
HIGH TO LOW (ISL8490E/ISL8491E)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
518
PROCESS:
Si Gate BiCMOS
11
FN6073.4
July 26, 2007
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