N306AS 查看數據表（PDF） - Fairchild Semiconductor
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N306AS Datasheet PDF : 11 Pages
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February 2002
ISL9N306AP3/ISL9N306AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.0052Ω (Typ), VGS = 10V
• rDS(ON) = 0.0085Ω (Typ), VGS = 4.5V
• Qg (Typ) = 30nC, VGS = 5V
• Qgd (Typ) = 11nC
• CISS (Typ) = 3400pF
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
D
GATE
SOURCE
TO-263AB
DRAIN
(FLANGE)
TO-220AB
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = V, RθJC = 43oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
G
S
Ratings
30
±20
75
61
18
Figure 4
125
0.83
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-220, TO-263
1.2
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-220, TO-263
62
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
43
oC/W
Package Marking and Ordering Information
Device Marking
N306AS
N306AP
Device
ISL9N306AS3ST
ISL9N306AP3
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
©2002 Fairchild Semiconductor Corporation
Rev. B, February 2002
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