6V1U1 查看數據表（PDF） - STMicroelectronics
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6V1U1 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
ITAxxU1
Table 1. Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
PPP Peak pulse power (8/20 µs)(1)
IPP Peak pulse current (8/20 µs)(1)
I2t
Wire I2t value(1)
Tj initial = Tamb
Tj initial = Tamb
Value
Unit
300
W
40
A
0.6
A2s
Tj
Maximum operating junction temperature
125
°C
Tstg Storage temperature range
-55 to +150
°C
TL Maximum lead temperature for soldering during 10 s
260
°C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Table 2. Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
I
VRM Stand-off voltage
IF
VBR Breakdown voltage
VCL Clamping voltage
IRM Leakage current
IPP Peak pulse current
VBR
VCL
VRM
VF
V
IRM
αT Voltage temperature coefficient
VF
Forward voltage drop
IPP
C
Capacitance
VBR
min.
Order code
(1)
@ IR
IRM @ VRM
max.
VCL @ IPP VCL @ IPP
max. 8/20 µs max. 8/20 µs
(1)
(1)
αT
max.
C
max.
(2)
VF @ IF
max.
V mA µA
V
V
A
V
A 10-4/ °C pF
V
A
ITA6V1U1 6.51 1
10
5
10
10
12
25
4
1500 1.3 1
1. Between I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.
2/8
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