IW4052B 查看數據表（PDF） - IK Semicon Co., Ltd
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IW4052B Datasheet PDF : 7 Pages
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IW4052B
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC DC Supply Voltage (Referenced to GND)
VIN DC Input Voltage (Referenced to GND)
IIN
DC Input Current, per Pin
PD Power Dissipation in Still Air
-0.5 to +20
V
-0.5 to VCC +0.5
V
±10
mA
500*1
mW
Ptot Power Dissipation per Output Transistor
Tstg Storage Temperature
100
mW
-65 to +150
°C
TL Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
(Plastic DIP or SO Package)
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
*1 - for Plastic DIP from -55° to +100°C, for SO Package from -55° to +65°C.
+Derating - Plastic DIP: - 12 mW/°C from 100° to 125°C
SO Package: - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VIN
TA
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
Operating Temperature, All Package Types
Min Max Unit
3.0
18
V
0
VCC
V
-55
+125
°C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused digital pins must be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
Analog I/O pins may be left open or terminated.
Rev. 00
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