IXA12IF1200HB 查看數據表（PDF） - IXYS CORPORATION
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IXA12IF1200HB Datasheet PDF : 6 Pages
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IGBT
Symbol
VCES
VGES
VGEM
I C25
I C100
Ptot
VCE(sat)
Definition
collector emitter voltage
max. DC gate voltage
max. transient gate emitter voltage
collector current
total power dissipation
collector emitter saturation voltage
VGE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I GES
Q G(on)
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
I CM
SCSOA
t SC
I SC
R thJC
RthCH
gate emitter leakage current
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
short circuit safe operating area
short circuit duration
short circuit current
thermal resistance junction to case
thermal resistance case to heatsink
IXA12IF1200PB
preliminary
Conditions
IC = 10A; VGE = 15 V
IC = 0.3mA; VGE = VCE
VCE = VCES; VGE = 0 V
VGE = ±20 V
VCE = 600 V; VGE = 15 V; IC =
inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG=100 Ω
VGE = ±15 V; RG=100 Ω
VCEmax = 1200 V
VCEmax = 900 V
VCE = 900 V; VGE = ±15 V
RG= 100 Ω; non-repetitive
TVJ = 25°C
TC = 25°C
TC = 100°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
10 A
TVJ = 125°C
TVJ = 125°C
TVJ = 125°C
Ratings
min. typ. max. Unit
1200 V
±20 V
±30 V
20 A
13 A
85 W
1.8 2.1 V
2.1
V
5.4 5.9
0.1
6.5 V
0.1 mA
mA
500 nA
27
nC
70
ns
40
ns
250
ns
100
ns
1.1
mJ
1.1
mJ
30 A
40
0.50
10 µs
A
1.5 K/W
K/W
Diode
VRRM
I F25
IF 100
VF
max. repetitive reverse voltage
forward current
forward voltage
IR
Qrr
I RM
t rr
E rec
R thJC
R thCH
reverse current
* not applicable, see Ices value above
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
IF = 10A
VR = VRRM
VR = 600 V
-diF /dt = -250 A/µs
IF = 10A; VGE = 0 V
TVJ = 25°C
TC = 25°C
TC = 100°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
1.95
*
1.3
10.5
350
0.35
0.50
1200 V
22 A
14 A
2.20 V
V
* mA
mA
µC
A
ns
mJ
1.8 K/W
K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20110330a
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