IXGA20N120A3 查看數據表（PDF） - IXYS CORPORATION
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IXGA20N120A3 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
IC = 20A, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive Load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10Ω
Note 2
RthJC
RthCK
TO-220
TO-247
IXGA20N120A3 IXGP20N120A3
IXGH20N120A3
Characteristic Values
Min. Typ. Max.
TO-247 (IXGH) AD Outline
7
12
S
1075
pF
80
pF
27
pF
50
nC
7.3
nC
23
nC
16
44
2.85
290
715
6.47
ns
ns
mJ
ns
1 = Gate
2 = Collector
ns
3 = Emitter
mJ
Tab = Collector
16
ns
50
ns
5.53
mJ
310
ns
1220
ns
10.10
mJ
0.50
0.21
0.69 °C/W
°C/W
°C/W
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
TO-263 (IXGA) Outline
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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